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Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

机译：n型4H-siC上W肖特基接触电子束沉积过程中引入缺陷的电学特性

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We have studied the defects introduced in n-type 4H-SiC during electron beam deposition(EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltageand capacitance-voltage measurements showed deviations from ideality due todamage, but were still well suited to a DLTS study. We compared the electrical properties ofsix electrically active defects observed in EBD Schottky barrier diodes with those introducedin resistively evaporated material on the same material, as-grown, as well as after high energyelectron irradiation (HEEI). We observed that EBD introduced two electrically active defectswith energies EC – 0.42 and EC – 0.70 eV in the 4H-SiC at and near the interface with thetungsten. The defects introduced by EBD had properties similar to defect attributed to thesilicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible forthe increase in concentration of a defect attributed to nitrogen impurities (EC – 0.10) as wellas a defect linked to the carbon vacancy (EC – 0.67). Annealing at 400 °C in Ar ambientremoved these two defects introduced during the EBD.
机译：我们通过深能级瞬态光谱法（DLTS）研究了钨在电子束沉积（EBD）期间在n型4H-SiC中引入的缺陷。电流电压和电容电压测量的结果表明，由于损坏而偏离理想状态，但仍然非常适合DLTS研究。我们将在EBD肖特基势垒二极管中观察到的六个电活性缺陷的电学性质与引入到同一材料上的电阻蒸发材料中的那些电缺陷进行了比较，以及在高能电子辐照后（HEEI）。我们观察到，EBD在与钨的界面及其附近的4H-SiC中引入了两种电活性缺陷，其能量为EC – 0.42和EC – 0.70 eV。 EBD引入的缺陷具有与4H-SiC HEEI期间引入的硅或碳空位缺陷相似的性质。 EBD也是造成氮杂质缺陷浓度（EC – 0.10）以及与碳空位有关的缺陷浓度（EC – 0.67）增加的原因。在Ar气氛中于400°C退火可以消除在EBD期间引入的这两个缺陷。

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